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Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystall

Nov. 26, 2014

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Ghoneim, M.T., Rojas, J.P., Young, C.D., Bersuker, G. and Hussain, M.M., 2015. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon. IEEE Transactions on Reliability, 64(2), pp.579-585.

Abstract

We report on the electrical study of high dielectric constant insulator and metal gate metal 
oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric 
which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline 
silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping 
voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained 
flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are 
compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer.

via IEEE Transactions on Reliability
Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon.pdf
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