Ghoneim, M.T., Kutbee, A., Ghodsi Nasseri, F., Bersuker, G. and Hussain, M.M., 2014. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric. Applied Physics Letters, 104(23), p.234104.
Ghoneim, M.T., Kutbee, A., Ghodsi Nasseri, F., Bersuker, G. and Hussain, M.M., 2014. Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric. Applied Physics Letters, 104(23), p.234104.
We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.