Ghoneim, M.T., Zidan, M.A., Alnassar, M.Y., Hanna, A.N., Kosel, J., Salama, K.N. and Hussain, M.M., 2015. Thin PZT‐Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications. Advanced Electronic Materials, 1(6).

Abstract

A flexible version of traditional thin lead zirconium titanate ((Pb 1.1 Zr 0.48 Ti 0.52 O 3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (ie, more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between 
substrate's thickness and its flexibility, traditional PZT based FeRAM on silicon is 
transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics' flexibility while preserving the superior performance of silicon CMOS …